Infineon BSP170: A High-Performance N-Channel Logic Level Enhancement Mode Power MOSFET

The Infineon BSP170 is a highly efficient N-Channel Logic Level Enhancement Mode Power MOSFET designed to deliver superior performance in low-voltage applications. As electronic devices continue to demand higher efficiency, smaller form factors, and improved reliability, the BSP170 stands out as a critical component for power management and switching tasks.

One of the key advantages of the BSP170 is its logic-level compatibility, which allows it to be driven directly from microcontrollers, DSPs, or other low-voltage control circuits without requiring additional interface components. This feature simplifies circuit design, reduces component count, and lowers overall system costs. With a low threshold voltage and minimal on-state resistance (RDS(on)), the BSP170 ensures minimal power loss and high efficiency during operation, making it ideal for energy-sensitive applications.

The MOSFET’s enhancement mode operation guarantees that the device remains off when no gate voltage is applied, enhancing system safety and preventing unintended conduction. Its robust construction enables it to handle continuous drain current up to 1.7 A and withstand drain-source voltages up to 60 V, providing designers with flexibility in various power switching scenarios.

Thermal performance is another area where the BSP170 excels. Housed in a compact SOT-223 package, it offers excellent heat dissipation properties, ensuring reliable operation even under demanding conditions. This makes it suitable for applications such as DC-DC converters, load switching, motor control, and power supply units.

In addition, the BSP170 is characterized by its fast switching speed, which reduces transition losses and improves efficiency in high-frequency circuits. Its avalanche ruggedness and ESD protection further enhance durability, making it a dependable choice for industrial, automotive, and consumer electronics.

ICGOO FIND:

The Infineon BSP170 is a versatile and efficient power MOSFET that combines logic-level drive capability, low on-resistance, and robust thermal performance. It is an excellent solution for modern power management applications where efficiency, compactness, and reliability are paramount.

Keywords:

Logic Level, Enhancement Mode, Low RDS(on), Power Switching, Thermal Performance