Infineon IPP60R380P6 600V CoolMOS™ P6 Power Transistor: Performance and Applications

Release date:2025-11-10 Number of clicks:74

Infineon IPP60R380P6 600V CoolMOS™ P6 Power Transistor: Performance and Applications

The Infineon IPP60R380P6 represents a significant advancement in high-voltage power MOSFET technology, leveraging Infineon’s innovative CoolMOS™ P6 platform. Designed for high-efficiency and high-power-density applications, this 600V superjunction MOSFET combines low switching losses, excellent thermal performance, and superior reliability, making it an ideal choice for modern switch-mode power supplies (SMPS), industrial drives, renewable energy systems, and electric vehicle charging infrastructure.

Key Performance Characteristics

One of the standout features of the IPP60R380P6 is its exceptionally low on-state resistance—just 380 mΩ at 25°C—which directly contributes to reduced conduction losses. This allows designers to achieve higher system efficiency while minimizing heat generation. The device also exhibits ultra-low gate charge (Qg) and output capacitance (Coss), enabling faster switching frequencies and reduced switching losses. This is particularly beneficial in applications requiring high-frequency operation, such as LLC resonant converters and active power factor correction (PFC) stages.

Moreover, the CoolMOS™ P6 technology incorporates advanced packaging options, including the TO-220 FullPAK, which provides enhanced creepage distance and improved isolation characteristics. This makes the device suitable for use in harsh environments where safety and reliability are paramount.

Application Highlights

In SMPS designs, the IPP60R380P6 is often deployed in high-efficiency AC-DC converters for servers, telecom equipment, and gaming consoles. Its ability to operate at elevated switching frequencies allows for smaller magnetic components, contributing to overall size reduction and higher power density.

For industrial motor drives and solar inverters, the transistor’s robust performance ensures reliable operation under high-stress conditions. The device’s high avalanche ruggedness and superior body diode characteristics make it well-suited for half-bridge and full-bridge configurations, where reverse recovery behavior is critical.

Additionally, the IPP60R380P6 is increasingly used in electric vehicle (EV) charging stations and onboard chargers (OBCs), where efficiency and thermal management are key design challenges. Its low losses help maintain high efficiency across a wide load range, reducing cooling requirements and system cost.

ICGOODFIND Summary:

The Infineon IPP60R380P6 CoolMOS™ P6 transistor sets a new benchmark for high-voltage power devices, delivering exceptional efficiency, thermal performance, and reliability. Its optimized switching characteristics and low conduction losses make it a versatile solution for next-generation power electronics across industrial, consumer, and automotive sectors.

Keywords:

CoolMOS™ P6, High-Efficiency Switching, Low On-Resistance, Power Density, Thermal Performance

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