Infineon IRF7341GTRPBF Dual MOSFET: Features, Applications, and Technical Specifications

The Infineon IRF7341GTRPBF is a highly integrated dual N-channel and P-channel MOSFET in a compact SO-8 package, designed to deliver exceptional power efficiency and reliability in a wide range of applications. This component combines two MOSFETs—one with N-channel and the other with P-channel enhancement mode—in a single package, making it an ideal solution for space-constrained designs requiring high performance.

Key Features

One of the standout features of the IRF7341GTRPBF is its low on-state resistance (RDS(on)), which minimizes conduction losses and improves overall efficiency. The N-channel MOSFET offers an RDS(on) of just 0.055Ω, while the P-channel variant provides 0.105Ω, both measured at 10V gate-source voltage. This low resistance ensures reduced power dissipation and enhanced thermal performance. Additionally, the device operates with a logic-level gate drive, allowing it to be controlled directly by microcontrollers or low-voltage digital circuits, simplifying design and reducing component count. The dual MOSFET configuration is housed in a space-saving SOIC-8 package, which is optimized for high-density PCB layouts. With a high current handling capability of up to 4.3A for the N-channel and 3.7A for the P-channel, this device is robust enough for power management tasks. It also features fast switching characteristics, making it suitable for high-frequency applications.

Applications

The IRF7341GTRPBF is versatile and finds use in numerous fields. It is commonly employed in DC-DC converter circuits, where its dual-channel design is used in synchronous buck or boost converters to achieve high efficiency. In motor control systems, it enables precise direction and speed control for small motors. The device is also ideal for power management in portable devices, such as smartphones and tablets, due to its compact size and low power consumption. Additionally, it is used in load switching applications and battery protection circuits, where its reliability and efficiency are critical. Other applications include OR-ing logic circuits and polarity protection, leveraging the complementary nature of the N and P channels.

Technical Specifications

- Package: SOIC-8

- Channel Type: Dual (N-Channel and P-Channel)

- Drain-Source Voltage (VDS): N-Channel: 55V, P-Channel: 55V

- Continuous Drain Current (ID): N-Channel: 4.3A, P-Channel: 3.7A

- RDS(on) (Max): N-Channel: 0.055Ω @ VGS=10V, P-Channel: 0.105Ω @ VGS=10V

- Gate Threshold Voltage (VGS(th)): N-Channel: 1.5V (min), P-Channel: 1.5V (min)

- Operating Junction Temperature: -55°C to +150°C

ICGOODFIND Summary

The Infineon IRF7341GTRPBF Dual MOSFET stands out for its high integration, efficiency, and compact design, making it a top choice for modern electronic systems. Its combination of low RDS(on), logic-level compatibility, and robust performance ensures reliability in diverse applications, from power supplies to portable electronics.

Keywords: Dual MOSFET, Power Management, DC-DC Converter, Logic-Level Gate Drive, Low RDS(on)