Infineon IPB80P04P4-05: High-Performance P-Channel Power MOSFET for Automotive and Industrial Applications

Release date:2025-11-05 Number of clicks:91

Infineon IPB80P04P4-05: High-Performance P-Channel Power MOSFET for Automotive and Industrial Applications

The demand for robust and efficient power management solutions continues to grow across the automotive and industrial sectors. Addressing this need, the Infineon IPB80P04P4-05 stands out as a high-performance P-Channel Power MOSFET engineered to deliver superior performance in demanding environments. This component is specifically designed to meet the rigorous requirements of modern electronic systems, where reliability, efficiency, and compactness are paramount.

As a P-Channel MOSFET, this device offers a significant advantage in circuit design, particularly for high-side switching applications. Its -40 V drain-source voltage (VDS) rating and -80 A continuous drain current (ID) capability make it suitable for handling substantial power levels. The very low typical on-state resistance (RDS(on)) of just 4.5 mΩ is a key feature, as it directly translates to reduced conduction losses and higher overall system efficiency. This minimizes heat generation, allowing for more compact designs without the need for extensive cooling systems.

A primary application area for the IPB80P04P4-05 is in the automotive industry, where it is ideal for use in load switches, motor control modules, and power distribution units. Its ability to operate reliably over a wide temperature range (-55 °C to +175 °C) ensures consistent performance under the hood, where components are subjected to extreme thermal and vibrational stress. Furthermore, its qualification for automotive applications guarantees adherence to the highest quality standards.

In industrial settings, this MOSFET excels in power supplies, battery management systems (BMS), and control logic for heavy machinery. The low RDS(on) and high current handling capability ensure that energy waste is kept to a minimum, which is critical for maintaining operational efficiency and reducing costs in large-scale industrial systems. The device’s TO-263 (D2PAK) package offers an excellent balance between power dissipation and board space, making it a versatile choice for various layout constraints.

The Infineon IPB80P04P4-05 represents a blend of advanced silicon technology and packaging innovation, providing designers with a reliable and high-efficiency component that simplifies circuit design and enhances system durability.

ICGOODFIND: The Infineon IPB80P04P4-05 is a top-tier P-Channel MOSFET that sets a high standard for power switching, offering exceptional efficiency, robustness, and reliability for the most challenging automotive and industrial applications.

Keywords: P-Channel MOSFET, Automotive Grade, Low RDS(on), High Efficiency, Power Management

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