Infineon IPN60R360P7S: A 600V CoolMOS™ Power Transistor for High-Efficiency Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching device is critical. The Infineon IPN60R360P7S, a 600V CoolMOS™ P7 superjunction MOSFET, emerges as a premier solution engineered to meet these challenges in a wide array of applications, including switched-mode power supplies (SMPS), lighting, and industrial motor drives.
A standout feature of the IPN60R360P7S is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 360mΩ at room temperature and an ultra-low gate charge (Q G ), this device masterfully balances the perennial trade-off between conduction and switching losses. This optimization is the cornerstone of its high-efficiency performance. Designers can achieve higher switching frequencies without incurring prohibitive switching losses, which in turn allows for the use of smaller passive components like magnetics and capacitors, leading to more compact and lighter end products.
The transistor is built upon Infineon’s advanced CoolMOS™ P7 technology. This platform is renowned for its superior switching behavior and enhanced ruggedness. The technology incorporates an integrated fast body diode with excellent reverse recovery characteristics, which is vital for performance in hard-switching topologies like power factor correction (PFC) circuits. Furthermore, the P7 series offers improved electromagnetic compatibility (EMC), simplifying filter design and compliance with regulatory standards.
Housed in a robust TO-220 FullPAK package, the IPN60R360P7S offers a significant advantage. This package features a fully molded, isolated outer casing, providing a high level of isolation between the heatsink and the live semiconductor die. This eliminates the need for an additional insulating washer and mounting clip, streamlining the assembly process, reducing the bill of materials (BOM), and improving overall thermal reliability. The package's design enhances creepage and clearance distances, supporting the development of safer and more reliable systems.
Beyond its raw electrical specifications, the device contributes to enhanced system-level reliability. Its high avalanche ruggedness and strong tolerance to repetitive overcurrent conditions ensure robust operation even in demanding environments where voltage spikes and transient overloads may occur. This makes it an ideal choice for industrial-grade equipment that must guarantee long-term operational integrity.
ICGOOODFIND: The Infineon IPN60R360P7S is a high-performance 600V MOSFET that sets a benchmark for efficiency and power density in switching applications. Its optimal blend of low R DS(on) and Q G, advanced CoolMOS™ P7 technology, and innovative isolated FullPAK package provides designers with a powerful component to create smaller, more efficient, and highly reliable power conversion systems.
Keywords: High-Efficiency Switching, CoolMOS™ P7 Technology, Low Gate Charge (Q G), Isolated TO-220 FullPAK, Superjunction MOSFET.
