Infineon IPN80R4K5P7: A High-Performance 800V CoolMOS™ P7 Power Transistor

In the realm of high-power applications, efficiency, reliability, and thermal performance are paramount. The Infineon IPN80R4K5P7 stands out as a state-of-the-art 800V CoolMOS™ P7 power transistor engineered to meet these demanding requirements. This device exemplifies Infineon’s commitment to pushing the boundaries of power semiconductor technology, offering exceptional efficiency and ruggedness for a wide range of industrial and consumer applications.

Built on Infineon’s advanced superjunction technology, the IPN80R4K5P7 delivers ultra-low on-state resistance (RDS(on)) of just 450 mΩ at maximum gate voltage. This low resistance minimizes conduction losses, which is critical for improving overall system efficiency. The transistor’s 800V breakdown voltage ensures robust performance in high-voltage environments, making it suitable for applications such as switched-mode power supplies (SMPS), power factor correction (PFC) stages, lighting systems, and industrial motor drives.

A key highlight of the CoolMOS™ P7 series is its enhanced switching performance. The IPN80R4K5P7 features reduced gate charge (Qg) and improved figure-of-merit (FOM), which collectively contribute to lower switching losses and higher frequency operation. This allows designers to develop more compact and efficient power supplies without compromising thermal management.

Thermal management is further supported by the device’s low thermal resistance and high durability. The transistor is housed in a TO-220 FullPAK package, which provides superior isolation and cooling performance, essential for high-power-density designs. Additionally, the CoolMOS™ P7 technology incorporates increased avalanche ruggedness and enhanced body diode robustness, ensuring reliable operation under extreme conditions such as overvoltage and overcurrent events.

The IPN80R4K5P7 also contributes to system-level cost savings by enabling simpler circuit designs, reduced heatsinking requirements, and higher power density. Its compatibility with high-frequency operation allows the use of smaller passive components, further reducing the overall footprint and cost.

ICGOOODFIND:

The Infineon IPN80R4K5P7 CoolMOS™ P7 transistor sets a new benchmark for high-voltage power MOSFETs with its combination of low RDS(on), high switching speed, and excellent thermal characteristics. It is an ideal choice for designers seeking to optimize efficiency and reliability in next-generation power systems.

Keywords:

High Efficiency, 800V Breakdown Voltage, Low RDS(on), Fast Switching, Thermal Performance