Infineon BSM75GB120DLC IGBT Module: Datasheet, Pinout, Application Circuit, and Characteristics
The Infineon BSM75GB120DLC is a prominent IGBT module designed for high-power switching applications, combining robust performance with high reliability. This module is part of Infineon’s industry-standard product range, widely used in industrial motor drives, renewable energy systems, UPS, and power conversion units. Its optimized design ensures low losses, high efficiency, and excellent thermal management, making it suitable for demanding environments.
Datasheet Overview
Key parameters from the datasheet define the module’s capabilities:
- Collector-Emitter Voltage (VCES): 1200 V
- Nominal Collector Current (IC): 75 A at 80°C
- Maximum Junction Temperature (Tvj): 150°C
- Saturation Voltage (VCE(sat)): 2.35 V (typical at 75 A, 25°C)
- Switching Frequency: Up to 20 kHz (optimized for minimal switching losses)
The module integrates a NPT (Non-Punch Through) IGBT technology and includes a freewheeling diode, ensuring reverse current handling and enhanced system reliability.
Pinout Configuration
The BSM75GB120DLC is a dual IGBT module in a half-bridge configuration, housed in a standardized package. The pinout includes:
- Terminals 1 (G1) and 2 (E1): Gate and emitter for IGBT1.
- Terminals 3 (G2) and 4 (E2): Gate and emitter for IGBT2.
- Terminal 5 (N/C): Not connected.
- Terminals 6 (C1), 7 (E1), 8 (C2), and 9 (E2): Power connections for collectors and emitters.
Proper gate driving and isolation are critical to avoid shoot-through and ensure safe operation.
Application Circuit
A typical half-bridge inverter circuit using the BSM75GB120DLC is common in motor drives and three-phase inverters. The design includes:
- DC Link Capacitors: Stabilize the input voltage and suppress noise.
- Gate Drivers: Isolated drivers (e.g., based on ICs like IR2110) provide necessary voltage (typically +15 V/-15 V) to switch IGBTs efficiently.
- Snubber Circuits: Optional RC snubbers reduce voltage spikes during switching.
- Current Shunts/Sensors: Monitor load current for protection and control.
The module’s low inductance design minimizes overshoot and ringing, contributing to system stability.
Key Characteristics
1. Low Switching Losses: Enables high-frequency operation without excessive heat generation.
2. High Short-Circuit Withstand Time: Provides robustness under fault conditions.
3. Temperature Sensing: Integrated NTC thermistor allows real-time thermal monitoring.
4. Low VCE(sat)): Reduces conduction losses, improving overall efficiency.
5. Isolated Baseplate: Offers electrical isolation simplifying heatsink mounting and system design.
ICGOOODFIND
The Infineon BSM75GB120DLC stands out as a high-performance, reliable solution for medium- to high-power applications. Its balanced characteristics in switching speed, loss reduction, and thermal management make it a preferred choice for engineers designing efficient and durable power electronic systems.
Keywords:
IGBT Module, High-Power Switching, Half-Bridge Configuration, Thermal Management, Infineon
