Infineon IPC90N04S5-3R6: High-Performance 40V N-Channel MOSFET for Power Management
In the realm of modern power electronics, achieving high efficiency, robust performance, and thermal stability is paramount. The Infineon IPC90N04S5-3R6 stands out as a premier 40V N-Channel MOSFET engineered to meet these demanding requirements. Utilizing Infineon's advanced OptiMOS 5 power technology, this component sets a new benchmark for power management solutions in a wide array of applications, from server and telecom hardware to battery management systems and high-frequency DC-DC converters.
A key highlight of the IPC90N04S5-3R6 is its exceptionally low on-state resistance (RDS(on)) of just 0.9 mΩ (max). This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. By operating cooler, the MOSFET enhances the reliability and longevity of the entire application, allowing for more compact designs without the need for excessive heat sinking.
Furthermore, this MOSFET is characterized by its outstanding switching performance. The OptiMOS 5 technology ensures low gate charge (Qg) and figures of merit that are optimized for high-frequency operation. This makes it an ideal choice for switch-mode power supplies (SMPS) where fast switching speeds are essential to achieve higher power density and improved transient response. The device's ability to handle high currents with minimal losses makes it exceptionally suitable for demanding load scenarios.
The component comes in a space-saving and thermally efficient SuperSO8 package (PG-TDSON-8). This package is designed for superior power dissipation, effectively moving heat away from the silicon die. Its compact footprint is a significant advantage for modern electronics where board space is at a premium, enabling designers to create more powerful yet smaller end products.
Designed with robustness in mind, the IPC90N04S5-3R6 offers a high level of reliability and durability. It features a qualified avalanche ruggedness and is fully characterized for reverse diode recovery, ensuring stable and safe operation even under stressful conditions like inductive switching and overloads. This makes it a trustworthy component for mission-critical industrial and automotive applications.
ICGOODFIND Summary: The Infineon IPC90N04S5-3R6 is a top-tier 40V N-Channel MOSFET that excels in providing maximum efficiency, superior thermal performance, and high power density. Its combination of ultra-low RDS(on), excellent switching characteristics, and a robust package makes it an optimal solution for next-generation power management designs.
Keywords: OptiMOS 5 Technology, Low RDS(on), High-Efficiency Power Management, SuperSO8 Package, Fast Switching Performance
