Infineon BSS123IXTSA1: A High-Performance N-Channel Logic Level Enhancement Mode MOSFET
The Infineon BSS123IXTSA1 is a highly efficient N-Channel Logic Level Enhancement Mode MOSFET designed for low-voltage, high-speed switching applications. This surface-mount device, housed in a compact SOT-23 package, is engineered to deliver superior performance in a minimal footprint, making it an ideal choice for modern electronic designs where space and power efficiency are critical.
One of the standout features of the BSS123IXTSA1 is its low threshold voltage, typically around 1.5V, which allows it to be driven directly from logic-level signals (3.3V or 5V) from microcontrollers, FPGAs, or other digital ICs. This eliminates the need for additional level-shifting circuitry, simplifying design and reducing both component count and board space. With a continuous drain current rating of 170mA and a low on-resistance (RDS(on)) of 6Ω max, this MOSFET ensures minimal power loss and heat generation during operation, enhancing overall system efficiency.
The device’s fast switching characteristics make it particularly suitable for applications such as load switching, power management, signal routing, and DC-DC converters. Its enhancement mode operation ensures the device remains off when no gate voltage is applied, providing inherent safety in circuit design. Additionally, the BSS123IXTSA1 offers robust ESD protection, improving reliability in sensitive environments.
Infineon’s commitment to quality is evident in the BSS123IXTSA1’s performance metrics, including a low gate charge and high avalanche ruggedness. These attributes make it a dependable component for automotive, consumer electronics, industrial control, and IoT applications.
ICGOOODFIND: The Infineon BSS123IXTSA1 excels as a logic-level MOSFET, offering low RDS(on), compact packaging, and compatibility with modern digital systems, making it a top choice for efficient power switching.
Keywords:
Logic Level MOSFET
Low RDS(on)
Enhancement Mode
SOT-23 Package
Fast Switching
