Infineon IRFB7546PBF 100V N-Channel Power MOSFET Datasheet and Application Analysis
The Infineon IRFB7546PBF stands as a robust and highly efficient N-Channel power MOSFET engineered for demanding high-power switching applications. Leveraging Infineon's advanced proprietary technology, this component is optimized for performance, reliability, and thermal management, making it a prime choice for designers in sectors like industrial motor drives, switch-mode power supplies (SMPS), and DC-DC converters.
A central feature of the IRFB7546PBF is its exceptionally low on-state resistance (RDS(on)) of just 3.3 mΩ (max. at VGS = 10 V). This critical parameter is paramount for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. The device is rated for a continuous drain current (ID) of 100 A at a case temperature of 100°C, showcasing its ability to handle substantial power levels. The 100V drain-to-source voltage (VDS) rating provides a solid safety margin for 48V bus systems and other high-current, mid-voltage applications, ensuring reliable operation against voltage spikes.
The MOSFET is built on Infineon's proven StripFET technology. This proprietary process enhances switching performance and ruggedness by optimizing the cell structure. Furthermore, the device boasts an avalanche rated design, meaning it can withstand a certain amount of energy (EAS) during unclamped inductive switching (UIS) events, a common occurrence in motor control and inductive load circuits. This intrinsic ruggedness protects the device from failure due to voltage transients.
The low gate charge (QG typical 130 nC) and rapid switching capabilities make it suitable for high-frequency operation. However, designers must pay close attention to the gate drive circuit. To achieve the low RDS(on), a gate drive voltage (VGS) of 10V is recommended. A powerful, low-impedance gate driver is essential to quickly charge and discharge the input capacitance, minimizing switching losses and preventing the device from operating in the linear region for extended periods.
Thermal management is another crucial consideration. Despite its low RDS(on), the high current handling can still generate significant heat. The component is offered in a TO-220 FullPAK package, which features a fully isolated mounting hole. This simplifies assembly and improves creepage distances but can have a slightly higher thermal resistance to the heatsink compared to some other packages. Ensuring a proper heatsink with good thermal interface material is vital for maintaining junction temperature within safe limits and maximizing long-term reliability.
ICGOOODFIND: The Infineon IRFB7546PBF is a high-performance power MOSFET distinguished by its ultra-low RDS(on), high current capability, and avalanche ruggedness. Its optimal balance of efficiency and robustness makes it an excellent component for engineers designing high-efficiency, high-power switching systems where thermal performance and reliability are critical.
Keywords: Low RDS(on), High Current Switching, StripFET Technology, Avalanche Rated, TO-220 FullPAK.
